Process for fabricating a device utilizing partially deprotected resist polymers

ABSTRACT

A process for enhancing the performance of resist polymers in lithographic processes for device fabrication is disclosed. The resist polymers contain acid labile functional groups. When these functional groups are removed and replaced by hydrogen, the polymer becomes more soluble in the aqueous base developer solutions used in lithographic processes. A portion of the acid-labile functional groups are cleaved from the polymer to obtain a resist polymer with increased sensitivity, improved adhesion, and reduced film shrinkage during post-exposure bake. The acid labile functional groups are cleaved by dissolving the polymer in a suitable solvent and subjecting the mixture to increased temperature until the desired number of acid labile functional groups are cleaved from the polymer. The polymer is then recovered from the mixture and employed as a resist in a lithographic process for device fabrication.

This application is a continuation of application Ser. No. 08/008,029,filed on Jan. 25, 1993, abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a process for deprotecting chemicallyamplified resist materials in a controlled manner and the use of thesematerials in lithographic processes for device or photomask fabrication.

2. Art Background

Lithographic processes are typically employed in the manufacture ofdevices such as semiconductor devices, integrated optics, andphotomasks. Such processes utilize various energy sources to create arelief image in a film of resist material applied onto a substrate.Energy sources that are typically used in lithographic processes includelight and electron beam radiation.

Lithographic processes frequently employ resists that contain polymericmaterials. Some polymeric resist materials, such as those described inU.S. Pat. No. 4,812,542, dated Mar. 14, 1989, have what is referred toas a protective group that is attached to the polymer. The protectivegroup present in these materials is employed in the synthesis process tofacilitate the formation of the resist material. In certain instances,such protective groups alter the solubility characteristics of thepolymer.

Certain protective groups, when attached to the polymer, function asmoieties that render the polymer relatively insoluble in alkalinesolution. In lithographic processes, these moieties are removed uponirradiation and baking of the polymer film in the presence of aradiation-induced acid, and the polymer then becomes relatively moresoluble in alkaline solutions. For example, in a synthesized polymersuch as poly(4-tert-butoxycarbonyloxystyrene) the tert-butoxycarbonylprotective groups are removed and replaced by hydrogen to yield hydroxylsubstituents. For convenience, "tert" will be shortened to "t"hereinafter. After a substantial percentage of the moleties (thet-butoxycarbonyl or other groups) have been cleaved from the exposedpolymer, the polymer in the exposed region of the film is substantiallymore soluble in an aqueous alkaline developing solution.

The moieties are not cleaved from polymer in the unexposed regions.Therefore, the resist material in those regions is not as soluble in analkaline solution. If an alkaline solution is used to develop the imageprojected onto the resist, the material in the exposed regions isdissolved by the developer solution while the material in the unexposedregions is not. It is by this mechanism that a positive tone image isdeveloped that corresponds to the image projected into the resistmaterial. Conversely, if the resist polymer in the unexposed regions ismore soluble in the developer solution, then a negative tone image willbe developed into the resist material.

If light is used as the energy source in a lithographic process, theprocess is referred to as photolithography. If such photolithographicprocesses utilize an exposure that occurs simultaneously over an entiredevice or a number of devices being processed on a substrate, theprocess utilizes what is considered a blanket exposure. A material,i.e., a resist, which is sensitive to the exposing radiation is coatedonto a substrate, e.g., a silicon substrate, on which a plurality ofdevices will be formed. The coating material is (if desired)pre-exposure baked and is subjected to spatially discrete radiation,e.g., light that has been passed through a mask so that the lightreaching the resist defines a discrete area. The discrete area defines apattern that is to be transferred onto the underlying substrate eitherby negative or positive tone. The coated substrate is (if desired)post-exposure baked prior to image development of the discrete area onthe substrate. The resists used in photolithography are referred to as"photoresists".

A blanket exposure is advantageous because it is relatively fastcompared to other methods such as the raster scan technique that isemployed when the energy used to expose the resist is a beam ofelectrons. However, generally, the resolution that is achieved through ablanket exposure with near ultraviolet or visible light is somewhatpoorer than that achieved with other methods such as electron beamlithography.

Improved resolution with a blanket exposure can be achieved by usingshorter wavelength light such as deep ultraviolet or X-ray light. Oneapproach to a photoresist sensitive to shorter wavelength radiationemploys a photo-acid generator (PAG) that produces an acid moiety uponirradiation with deep ultraviolet light, together with a polymer thatreacts under the influence of heat with the generated acid. In anotherapproach, the polymer itself provides an acid functionality upon chainscission, thus eliminating the need for an added PAG.

As stated previously, protective groups are cleaved from the polymer inthe presence of acid. In some lithographic processes, acid is providedby a PAG. Typical PAG/acid sensitive polymer combinations include anonium salt as the PAG and a polymer such aspoly(4-t-butoxycarbonyloxystyrene) that has a reactive substituent,e.g., a t-butoxycarbonyl protective group. (See Ito, et al. U.S. Pat.No. 4,491,628dated Jan. 1, 1985.) Typical acid sensitive polymers thatprovide an acidic functionality upon radiation-induced chain scissioninclude poly(4-t-butoxycarbonyloxystyrene-sulfone). Such polymers aredisclosed in U.S. Pat. No. 5,066,566 to Novembre. Such systems aregenerally referred to as chemical amplification systems since theproduction of one molecule of acid by radiation (e.g., light) induces areaction in a plurality of reactive substituents in the acid sensitivepolymer. Since protective groups are not cleaved from the resist polymerin the unexposed regions, it follows that acid is preferably notgenerated or otherwise present in the unexposed regions.

Attempts have been made to improve the sensitivity and to reduce thefilm shrinkage of chemically amplified resists. By improving thesensitivity of resists, less energy is required to create the imagethroughout the resist layer. In this regard, resist materials that havebeen partially deprotected (by the process disclosed in Canadian PatentApplication 2,001,384, for example), have demonstrated enhancedsensitivity. Partial deprotection means that some, but not all, of theprotective groups are cleaved from the polymer prior to the polymer'suse in a lithographic process.

The '384 application states that some of the protective groups can beremoved from the polymer by adding a strong acid such as sulfuric acidto the polymer which is in a heated solution. The acid is neutralized bythe addition of base. The polymer is then isolated. The polymer is thencombined with a PAG in a spinning solvent. This solution of polymer andPAG is then employed to spin coat a substrate which is subsequentlyexposed.

This process requires additional reactions after the acid-catalyzeddeprotection to ensure the removal of added acid and base. A meticulousremoval of the added acid is required before the resist is coated ontothe substrate because any acid left in the polymer will degrade thepolymer film upon post exposure baking. The added acid is neutralized byadding base. However, the base must be added carefully because anyremaining base will neutralize a proportionate amount of photogeneratedacid. The excess base must also be removed meticulously.

Although chemically amplified resists show great promise for fine lineresolution, these materials have demonstrated a tendency to shrink afterthe exposure and post-exposure baking steps of the lithographic process.Shrinkage occurs when the protected polymer is heated in the presence ofacid, which releases the protecting groups in the form of gaseousproducts such as CO₂ and isobutylene from the polymer. Such shrinkageproduces a loss of image quality and, in pan, counteracts resolutionimprovement available through use of deep ultraviolet, X-ray, orelectron beam exposure. In device fabrication, because of particularlyfine design rules, this film shrinkage can significantly and adverselyaffect the quality of the features produced in the lithographic process.Thus, although chemically amplified resists are extremely promising,some improvement is desirable.

SUMMARY OF THE INVENTION

Chemically amplified resists that contain polymers with protectivegroups are improved by partially deprotecting the chemically amplifiedresist polymer prior to application and use of the polymer as a resist.Acid or base is not added to the chemically amplified resist polymer,nor need it be removed, when chemically amplified resist polymers arepartially deprotected using this process. Chemically amplified resistpolymers so improved are more radiation sensitive and shrink less whenused in lithographic processes for device fabrication. These chemicallyamplified resist polymers also exhibit better adhesion tosilicon-containing substrates.

Chemically amplified resist polymers suited for use in the disclosedprocess have substituent groups pendant to the backbone of the polymer.Acid labile functional groups are attached to at least some of thesesubstituent groups. In the disclosed process, a portion of these acidlabile groups are cleaved from the resist polymer prior to the resistpolymer's use in a lithographic process. The acid labile groups that arecleaved from the polymer are replaced by hydrogen. The acid labilefunctional groups act as protecting groups by altering the solubility ofthe polymer in aqueous base solutions. As more of these protectivegroups are removed and replaced by hydrogen, the polymer becomes moresoluble in aqueous base solution.

The resist polymer containing the acid labile groups is dissolved in anorganic solvent with a pK_(a) of greater than 5 to form a polymersolution. Preferably, the organic solvent has a pK_(a) of at least 15.These organic solvents are, therefore, preferably not strongly acidic.The polymer solution is heated to an elevated temperature of about 100°to 150° C. The temperature selected depends upon the amount ofdeprotection that is desired in a particular time frame.

The solution is maintained at the elevated temperature for an amount oftime that is sufficient to cleave a significant percentage, preferablyat least 5%, of the acid labile groups from the polymer. A time periodof seven hours or more may be utilized, however, much shorter timeperiods are contemplated to comply with processing constraints. When thepolymer has been deprotected to the desired degree, the solution iscooled. The solution is cooled sufficiently quickly to avoid furtherdeprotection. The partially deprotected polymer is then precipitatedfrom the solution by adding a non-solvent such as water or a suitableorganic non-solvent to the solution. The polymer is recovered from thesolution using conventional techniques such as filtration. The partiallydeprotected polymer is preferably washed and dried under vacuum. Afterthe polymer has been deprotected to the desired degree, it is employedas a resist in a process for device fabrication. The resist polymer sodeprotected is thus free of any added acid or base.

The acid labile group is an alkoxy carbonyl group or an alkyl group. Theacid labile group is preferably a t-butoxycarbonyl (TBOC) group or at-butyl group.

The polymer is any polymer suited for use as a resist polymer to whichsuitable acid labile groups will attach. Suitable polymers to whichthese acid labile functional groups are attached include polymers thatcontain 4-t-butoxycarbonyloxystyrene, N-t-butoxycarbonylmaleimide,t-butylmethacrylate, and t-butylvinylbenzoate. These polymers can eitherbe homopolymers of the above or copolymers such aspoly(styrene-t-butoxycarbonyloxystyrene),poly(t-butoxycarbonyloxystyrene-sulfone), andpoly(styrene-N-t-butoxycarbonylmaleimide). Terpolymers such aspoly(styrene-t-butoxycarbonyloxystyrene-maleimide) andpoly(acetoxystyrene-t-butoxy carbonyloxystyrene-sulfone) are alsosuitable. Tetra polymers such aspoly(styrene-t-butoxycarbonyloxystyrene-maleimide-N-methylmaleimide) arealso contemplated.

The organic solvent in which the polymer is dissolved can be any solventin which both the completely protected polymer and the partiallydeprotected polymer are sufficiently soluble. Solvents are chosen whichsolubilize the resist polymer to the desired degree throughout thedeprotection process. Not all solvents are suitable because, as theprotective groups are removed, groups that increase the aqueous basesolubility of the polymer, such as amine groups, hydroxyl groups, orcarboxyl groups, remain in their place. The acid labile functionalgroups and the moieties remaining after the acid labile groups areremoved provide the polymer with different solubility characteristics.As the number of acid labile groups removed from the polymer increases,the solubility characteristics of the protected polymer change.Therefore, organic solvents are chosen for their ability to sufficientlysolubilize the polymer regardless of the number of acid labileprotective groups that are cleaved from the resist polymer.

Non-acidic organic solvents have been found to be compatible with thiscontrolled deprotection process. Such solvents have a pK_(a) of greaterthan 5, and preferably have a pK_(a) of at least 15. Examples ofsuitable solvents are acetone (pK_(a) of about 20), anddimethylsulfoxide (pK_(a) of about 31 ). Cyclohexanone is anotherexample of a suitable organic solvent.

Preferably, the deprotection process occurs in the absence of oxygen. Inthis regard, the deprotection occurs in either a non-reactiveatmosphere, such as argon gas, or under negative pressure, i.e., vacuum.As the polymer is deprotected, gaseous species such as CO₂ andisobutylene, are produced. If the deprotection takes place in a pressurevessel, the production of these gaseous species will increase thepressure in the vessel as the deprotection proceeds unless these gasesare vented to the atmosphere. By monitoring the increase in pressureduring deprotection, the extent of deprotection can be determined.However, these gaseous products can be vented to the atmosphere as theyare generated, if desired.

The polymer, when deprotected to the desired degree, is used as a resistmaterial in lithographic processes. The polymer is used without addedPAG if the polymer contains a moiety that provides an acidicfunctionality upon radiation-induced chain scission. The polymer is usedwith added PAG, if the acid functionality provided by the PAG isrequired.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates the effect of temperature on the reaction time forcleaving t-butoxycarbonyl groups frompoly(4-t-butoxycarbonyloxystyrene-sulfone) in a dimethylsulfoxidesolvent.

FIG. 2 compares the effects of using dimethylsulfoxide and acetone assolvents on the reaction time for cleaving t-butoxycarbonyl groups frompoly(4-t-butoxycarbonyloxystyrene-sulfone).

FIG. 3 is a comparison of the rates at which t-butoxycarbonyl groups arecleaved from poly(4-t-butoxycarbonyloxystyrene) andpoly(4-t-butoxycarbonyloxystyrene-sulfone) at 140° C. using acetone as asolvent.

FIG. 4 is a comparison of the rates at which t-butoxycarbonyl groups arecleaved from poly(4-t-butoxycarbonyloxystyrene-sulfone) andpoly(4-acetoxystyrene-4-t-butoxycarbonyloxystyrene-sulfone) at 130° C.using acetone as a solvent.

FIG. 5 compares the actual sulfur content of poly(4-t-butoxycarbonyloxystyrene-sulfone) andpoly(4-acetoxystyrene-4-t-butoxycarbonyloxystyrene-sulfone) at varyingdegrees of cleavage of the t-butoxycarbonyl groups from these polymerswith the theoretical sulfur content of these same polymers assuming nosulfur loss.

FIG. 6 illustrates the effect of the degree to which thet-butoxycarbonyl groups are cleaved frompoly(4-t-butoxycarbonyloxystyrene-sulfone) on the optical density ofthis polymer at 248 nm.

FIG. 7 illustrates the effect of the degree to which thet-butoxycarbonyl groups are cleaved frompoly(4-t-butoxycarbonyloxystyrene) andpoly(4-acetoxystyrene-4-t-butoxycarbonyloxystyrene-sulfone) on theoptical density of these polymers at 248 nm. The solid line is the datafrom FIG. 6, provided for comparison.

FIG. 8 illustrates the effect of the degree to which thet-butoxycarbonyl groups are cleaved frompoly(4-t-butoxycarbonyloxystyrene-sulfone) andpoly(4-acetoxystyrene-4-t-butoxycarbonyloxystyrene-sulfone) on the filmthickness loss of these resist films during post-exposure baking.

DETAILED DESCRIPTION

The polymers deprotected according to this process are polymers to whichacid labile functional groups are attached. The acid labile functionalgroups are used to manipulate the solubility of the polymer so that thepolymer can be used as a resist in a lithographic process. For example,t-butoxycarbonyl (TBOC) groups are used to manipulate the solubility ofhydroxystyrene-containing polymers. In these hydroxystyrene-containingpolymers, most, i.e., greater than 95% of the hydroxyl groups are"protected". The hydroxyl groups on the aromatic ring of hydroxystyreneimpart relatively greater alkaline (base) solubility to the resistpolymer than other functional groups that do not contain the highlypolar oxygen-hydrogen bond. "Protected" means that the acid labilefunctional group renders the resist polymer relatively less soluble inaqueous base solution.

When a significant number of acid labile functional groups are affixedto the polymer, the polymer is relatively less soluble in aqueous basesolutions. When these functional groups are cleaved from the polymer,the polymer becomes more soluble in aqueous base solution.

"Acid labile" groups means that these groups are reactive in thepresence of acid. The acid labile groups are reactive in the sense thatthey are cleaved from the polymer in a particular chemical environment.In the disclosed process, a suitable chemical environment is provided tocleave a desired number of these acid labile functional groups from thepolymer. This environment is provided by heating a solution of thepolymer dissolved in a suitable organic solvent. The process occurs inthe absence of added acid. By manipulating the chemical environment inwhich the polymer with the acid labile groups is placed, and the amountof time the polymer is kept in that environment, the amount of acidlabile groups that are cleaved from the polymer is controlled.

It is desirable to deprotect the polymer to a limited extent to increasethe sensitivity of the resist material, reduce the film shrinkage, andimprove the adhesion of the resist material to substrates. Some, but notall, of the acid labile groups are cleaved from the polymer. As moreacid labile groups are cleaved from the polymer and replaced byhydrogen, the polymer becomes increasingly more soluble in the aqueousbase solutions that are frequently used to develop positive-tone imagesin lithographic processes.

When developing resist materials in processes for device fabrication, itis important that the exposed and unexposed regions have differentsolubilities in the developing solution relative to each other to ensurethat the developed image has adequate resolution and contrast.Therefore, it is important that the resist polymer only be deprotectedto a controlled extent to ensure that there will be an adequatedifference in the solubilities of the resist polymer in the exposed andunexposed regions. Consequently, the degree to which the protectinggroups, i.e., the acid labile groups, are cleaved from the polymer ispreferably controllable.

Removing a portion of the protective groups from the polymer, i.e.,"partial deprotection", increases the sensitivity of the resist comparedto resist polymers from which fewer protective groups have been removed.The sensitivity of a resist is a relative measurement determined by theamount of radiation necessary to achieve a particular effect.

Partial deprotection of the resist polymer also reduces the degree towhich the polymer shrinks after the film is subjected to a post-exposurebake (PEB) just prior to the film being developed. Shrinkage is reducedbecause fewer protective groups are cleaved during PEB since a portionof the protective groups were cleaved from the polymer during thedeprotection process. Less gaseous reaction products such as CO₂ andisobutylene are lost from the partially deprotected polymer during PEB,and the film shrinks less accordingly. Since film shrinkage adverselyaffects the image formed in the resist, it is desirable to reduce theamount the polymer shrinks during PEB. Resist polymers that arepartially deprotected according to the disclosed process shrinksignificantly less than resist polymers that are not so partiallydeprotected.

In this process, a protected polymer is first dissolved in suitableorganic solvent with a pK_(a) of greater than 5, preferably with apK_(a) of at least 15. The resulting solution is then placed in anoxygen-free environment, either under vacuum or under a non-reactive gasatmosphere, and is heated to the desired reaction temperature."Non-reactive" means that the gas does not substantially react with thepolymer solution.

The reaction temperature is in the range of about 100° C. to about 150°C. The solution is maintained at the reaction temperature for a lengthof time necessary to deprotect the polymer to the desired degree. Thelength of time will vary depending upon the temperature at which thedeprotection occurs, the nature of the solvent in which deprotectionoccurs, and the nature of the polymer being deprotected. At highertemperatures, deprotection occurs at a faster rate than at lowertemperatures. Therefore, it will take longer to deprotect a particularpolymer dissolved in a particular solvent to a particular degree at 110°C. as it will to deprotect the same polymer to the same degree at 130°C.

The length of time it takes to partially deprotect a polymer is alsosubject to processing constraints. The longer it takes to partiallydeprotect the polymer, the longer it will take to practice this process.At reaction temperatures of 100° C. to 150° C., the resist polymers aredeprotected to the desired degree in less than seven hours. Preferably,the polymers are deprotected to the desired degree in less than threehours.

The solution is cooled according to known techniques. Preferably, thesolution is cooled to below 100° C. in a relatively short length oftime, e.g., fifteen minutes or less, to avoid deprotecting the polymermore than the desired degree. The cooled solution is then added to anon-solvent such as water or a suitable non-aqueous non-solvent such ashexane or the like. The deprotected polymer precipitates from thenon-solvent., The deprotected polymer is then separated from thenon-solvent using a common separation method such as filtration. Thedeprotected polymer is washed simultaneously to remove the remainingsolvent. Traces of the non-solvent and solvent are preferably removedusing known methods such as vacuum drying. The deprotected polymer isthen made up into a resist solution by adding the polymer and, ifrequired, a PAG, to a spinning solution. The deprotected polymer is thenapplied to a substrate and used as a resist in a process for devicefabrication.

Suitable acid labile groups include alkyloxycarbonyl and alkyl groups,preferably t-butoxycarbonyl and t-butyl groups. These groups, whenattached to the resist polymer via substituents pendant to the polymerbackbone, render the resist polymer less soluble in aqueous basesolution.

Monomers to which these acid labile groups are attached include4-t-butoxycarbonyloxystyrene, N-t-butoxycarbonylmaleimide,t-butylmethacrylate, and t-butylvinylbenzoate. Suitable resist polymerswhich are deprotected according to this process include homopolymers ofthe above and copolymers such aspoly(styrene-t-butoxycarbonyloxystyrene),poly(t-butoxycarbonyloxystyrene-sulfone), andpoly(styrene-N-t-butoxycarbonylmaleimide). Terpolymers such aspoly(styrene-t-butoxycarbonyloxystyrene-maleimide) andpoly(acetoxystyrene-t-butoxycarbonyloxystyrene-sulfone) are alsosuitable. Tetrapolymers such aspoly(styrene-t-butoxycarbonyloxystyrene-maleimide-N-methylameimide) arealso contemplated.

Both the protected and partially deprotected polymers are preferablysoluble in the organic solvent in which the deprotection process occurs.The organic solvents are preferably not strongly acidic, i.e., theirpK_(a) is preferably more than 5. Solvents such as dimethyl sulfoxide(pK_(a) of about 31) and acetone (pK_(a) of about 20), are examples ofsuitable solvents. Cyclohexanone is another example of a solventsuitable for use in this deprotection process.

The following Examples are illustrative of the invention. These examplesare intended to illustrate and highlight the concepts embodied by theinvention and are not intended to limit the scope of the claims whichdefine this invention.

EXAMPLE 1 Preparation of Poly(4-t-butoxycarbonyloxystyrene)

A t-butoxycarbonyloxystyrene (PTBS) homopolymer was synthesized bycombining t-butoxycarbonyloxystyrene monomer (252 g) with toluene (60.9g) in a reactor. The monomer was mixed with toluene and the mixture wasvacuum-degassed. The reactor was charged with argon gas to a pressure of20 psig. The reactor was then heated to 60° C. An initiator, 2,2'-azobis(2-methylbutanenitrile) (5.256 g), was then added to the reactor in asolution with toluene (48.9 g) to initiate polymerization of themonomer. The 2,2'-azobis (2-methylbutanenitrile) is sold under thetrademark VAZO® 67, which is a trademark of the E. I. DuPont de NemoursCo., Inc. (DuPont).

After 360 minutes reaction time, the reactor was cooled and acetone (225ml) was added to dilute the reaction mixture. The resulting PTBS wasprecipitated in methanol (1.8 liters). The PTBS was separated from thesupematant liquor and then repeatedly rinsed with methanol by decanting.The PTBS was then redissolved in acetone (500 g) and then reprecipitatedin methanol (6 liters). The precipitate was then vacuum-filtered using aBuchner-type funnel, washed with methanol (1.5 liters) and then driedunder vacuum at ambient temperature until the product reached a constantweight.

In addition to the PTBS polymer prepared according to the proceduredescribed above, two other polymers were prepared by similar techniques.The polymers were a copolymer,poly(4-t-butoxycarbonyloxystyrene-sulfone) (PTBSS), and a terpolymer,poly(4-acetoxystyrene-4-t-butoxycarbonyloxystyrene-sulfone) (PASTBSS).Some of the properties of these three polymers are enumerated in Table Ibelow.

                                      TABLE 1                                     __________________________________________________________________________    POLYMER PROPERTEES                                                            Composition               Molecular                                                                             Spectral Absorption                                              Sulfur.sup.3                                                                       Weight.sup.4                                                                          IR     UV                                         AS.sup.1 :TBS.sup.2                                                                 (AS + TBS):SO.sub.2                                                                    Content                                                                            -- M.sub.w                                                                         -- M.sub.w                                                                       (1765 cm.sup.-1)                                                                     (248 nm)                             Polymer                                                                             (mol ratio)                                                                         (mol ratio)                                                                            (wt %)                                                                             (×10.sup.-5)                                                                 -- M.sub.n                                                                       (AU/μm)                                                                           (AU/μm)                           __________________________________________________________________________    PTBS  0     0        0    3.47 1.7                                                                              0.424  0.098                                PTBSS 0     3.18     4.19 1.61 1.5                                                                              0.366  0.111                                PASTBSS                                                                               0.66                                                                              2.75     5.28 0.95 1.6                                                                              0.336  0.298                                __________________________________________________________________________     .sup.1 acetoxystyrene                                                         .sup.2 t-butoxycarbonyloxystyrene                                             .sup.3 Measured using an oxidative combustion method.                         .sup.4 Measured by High Pressure Size Exclusion Chromatography.          

EXAMPLE 2 Controlled Deprotection oft-Butoxycarbonyloxystyrene-containing Polymers

A pressure-resistant reactor (Parr Instrument Co., model 4563) with aninternal volume of 617 ml was used as a vessel in which PTBSS wasdeprotected. The reactor was made of type 316 grade stainless steel.PTBSS (36 g) was dissolved in dimethylsulfoxide (DMSO) (180 g). Theresulting polymer solution was transferred to the pressure vessel andstirred while the vessel was sequentially vacuum-evacuated andback-filled with argon gas three times. The pressure vessel waspressurized to 20 psia with argon gas. The vessel was rapidly heated to140° C. and held at that temperature for 107 minutes. The vessel wasthen rapidly cooled by immersing the reactor body in an ice bath.

Samples of the polymer solution were collected using a pressureresistant manifold made of a type 316 stainless steel pre-sample tube(1.4 ml) and a sampling tube (10.0 ml), both of which were fitted with3-way valves and interconnected with Teflon® tubing with an outerdiameter of 1/8". Teflon is a registered trademark of DuPont. Thesethree-way valves were used to divert the flow of polymer solution intothe sample tubes, to flush acetone through the valve bodies andassociated tubing, and to flow argon through the valves and associatedtubing to dry them after sampling.

The contents of the sampling tube were then transferred to a 50 mldripping funnel with acetone (22 ml). The polymer contained in thediluted sample was precipitated in water (500 ml). The precipitatedpolymer was then vacuum-filtered using a Buchner funnel equipped withhardened filter paper (#520-B obtained from Schleicher and Schuell). Therecovered polymer solids were washed with additional water, and thendried under vacuum at ambient temperature to a constant weight.

The conditions under which the PTBSS polymer in this example wasdeprotected are enumerated in Table II below. The PTBSS polymer of thisexample is designated as Batch 1 in Table II. The other polymersenumerated in Table I were also deprotected according to the generalprocedure set forth in Example II, but under different conditions. Theconditions under which those polymers were deprotected, as well as thecomposition of the polymers deprotected, are enumerated in Table II aswell.

                                      TABLE II                                    __________________________________________________________________________    POLYMER DEPROTECTION CONDITIONS                                                           Materials Added to Reactor                                                                         Reaction Atmosphere                                      Polymer    Solvent      Initial                                                                            Final                                    Temp                                                                              Time      Amount    Amount  Pressure                                                                           Pressure                             Batch                                                                             (°C.)                                                                      (min)                                                                             Type  (g)  Type (g)  Type                                                                             (psia)                                                                             (psia)                               __________________________________________________________________________    1   140 107 PTBSS 36   DMSO 180  Ar 20   155                                  2   130 141 PTBSS 36   DMSO 180  Ar 20   138                                  3   120 262 PTBSS 36   DMSO 180  Ar 20   133                                  4   110 533 PTBSS 36   DMSO 180  Ar 20   118                                  .sup. 5.sup.1                                                                     130 141 PTBSS 36   DMSO 180  H.sub.2                                                                          250  300                                  6   140  99 PTBSS 36   acetone                                                                            180  Ar 20   193                                  7   130  28 PASTBSS                                                                             15   acetone                                                                             75  Ar 20   110                                  8   130 146 PTBSS 36   acetone                                                                            180  Ar 20   130                                  9   140  75 PTBSS 36   acetone                                                                            180  Ar 20   168                                  10  140  55 PTBSS 36   acetone                                                                            180  Ar 20   156                                  11  140 173 PTBS  36   acetone                                                                            180  Ar 20   175                                  12  130 112 PASTBSS                                                                             36   acetone                                                                            180  Ar 20   145                                  13  130  36 PASTBSS                                                                             36   acetone                                                                            180  Ar 20   119                                  __________________________________________________________________________     .sup.1 In this run, the pressure rose to 300 psia and the reactor was         vented back to 250 psia, several times                                   

EXAMPLE 3 Properties of Polymers Deprotected According to the DisclosedProcess

The polymers as prepared under the conditions enumerated in Table IIwere evaluated to determine their properties. Certain of the polymerswere evaluated not only at 100% deprotection, but also at varyingdegrees of deprotection during the process. Specifically, thedeprotected polymers were evaluated to determine their infraredabsorbance, the extent to which they were deprotected, their absorbanceof ultraviolet light at 248 nm, the sulfur content of the polymer, andthe weight loss of the polymer during thermogravimetric (TGA) analysis.The properties of the various deprotected polymers are enumerated inTable III.

                  TABLE III                                                       ______________________________________                                        DEPROTECTED POLYMER PROPERTIES                                                      IR abs..sup.1                                                                           Extent                   TGA.sup.5                                  at 1756   of.sup.2 De-                                                                           UV abs..sup.3                                                                         Sulfur.sup.4                                                                          Weight                                     cm.sup.-1 protec-  at 248 nm                                                                             Content Loss                                 Batch (AU/μm)                                                                              tion(%)  (AU/μm)                                                                            (wt %)  (%)                                  ______________________________________                                        1     0.218     40       0.296   --      --                                   1     0.031     92       0.640   --      --                                   1     0.018     95       0.676   --      --                                   1     0         100      0.719   --      --                                   1     0         100      0.710   --      --                                   2     0.273     25       0.234   --      --                                   2     0.130     64       0.455   --      --                                   2     0.068     81       0.597   --      --                                   2     0.021     94       0.669   --      --                                   3     0.266     27       0.231   --      --                                   3     0.200     45       0.346   --      --                                   3     0.132     64       0.444   --      --                                   3     0.044     88       0.606   --      --                                   4     0.267     27       0.230   --      --                                   4     0.196     46       0.340   --      --                                   4     0.089     76       0.519   --      --                                   4     0.040     89       0.607   --      --                                   5     0.232     37       0.257   --      --                                   5     0.077     79       0.529   --      --                                   5     0.032     91       0.622   --      --                                   5     0         100      0.698   --      --                                   6     0.318     13       0.141   4.39    --                                   6     0.235     36       0.284   4.94    --                                   6     0.152     58       0.383   5.54    --                                   6     0         100      1.242   --      --                                   7      .0309    11       0.238   --      25.6                                 8     0.363      1       0.144   --      --                                   8     0.325     11       0.169   4.49    --                                   8     0.292     20       0.228   --      --                                   8     0.244     33       0.285   5.00    --                                   8     0.232     37       0.292   --      29.5                                 9     0.153     58       0.382   5.57    23.4                                 10    0.193     47       0.312   5.29    25.9                                 11    0.421      1       0.102   0       --                                   11    0.276     35       0.123   0       --                                   11    0.207     51       0.126   0       --                                   12    0.304     12       0.282   5.51    25.4                                 12    0.251     33       0.385   5.78    19.4                                 12    0.160     57       0.494   6.31    12.5                                 12    0.097     82       0.619   6.74     5.1                                 12    0.070     95       0.672   6.92     1.5                                 13    0.269     10       0.232   --      26.0                                 13    0.249     12       0.287   5.59    25.3                                 13    0.234     23       0.321   --      22.1                                 13    0.244     27       0.342   5.72    21.0                                 ______________________________________                                         .sup.1 Samples were dissolved in 2methoxyethyl acetate and spindeposited      onto silicon wafer fragments. Infrared spectra were measured using a          Perkin Elmer Model 783 ratio recording spectrophotometer.                     .sup.2 Calculated from the intensity of the carbonyl absorbance at 1756       cm.sup.-1 and the polymer film thickness for PTBS and PTBSS. The extent o     deprotection of PASTBSS was measured based upon thermogravimetric analysi     (TGA).                                                                        .sup.3 Samples were dissolved in 2methoxyethyl acetate and spindeposited      onto quartz disks. Ultraviolet spectra were measured using a Hewlett          Packard diode array spectrophotometer (Model 8452 A).                         .sup.4 Measured using an oxidative combustion method.                         .sup.5 Thermogravimetric analysis (TGA) was carried out using a Perkin        Elmer TGA7 analyzer connected to a DEC personal workstation via a PAC7/DX     thermal instrument controller.                                           

EXAMPLE 4 Lithographic Testing of t-Butoxycarbonyloxystyrene-ContainingPolymers

Several completely protected PTBSS and PASTBSS polymers, and severaldeprotected derivative polymers, were tested for their lithographicsensitivity and their film thickness loss following the post-exposurebaking step (PEB) in a deep ultraviolet photolithographic process. Theresist solutions were prepared by adding the PAGbis(2-trifluoromethyl-6-nitrobenzyl)-l,3,benzenedisulfonate (0.563grams) to 3.75 grams of polymer and dissolving the mixture in2-methoxyethyl ether (22.7 ml). The solutions were filtered through a0.2 μm syringe filter and about 0.8 μm thick polymer films were spincoated onto silicon wafer substrates with a 4 inch diameter. Thesubstrates were then pre-baked on a hot plate for 30 seconds at 120° C.in an air atmosphere.

The pre-baked coated substrates were exposed to deep ultraviolet lightusing a Karl Suss MA 56M contact aligner that was fitted with a LambdaPhysik KrF laser (λ=248.7 nm). The laser was operated with a beam fluxof either 2.1 or 2.8 mJ/cm² /s. Coated substrates were exposed usingproximity printing through a quartz Multidensity Resolution Target fromOpto-Line Corporation. The coated substrates were then baked on a hotplate for 60 seconds at 120° C. in an air atmosphere. This second bakingstep is commonly referred to as a post-exposure bake (PEB).

The films were then developed in an aqueous solution oftetramethylammoniumhydroxide (0.28N) for 10 to 30 seconds. The samplefrom Batch 9 in Table III was developed in 0.22Ntetramethylammoniumhydroxide. The developed films were rinsed withdeionized water for 30 seconds. The thickness of the resulting filmswere measured with a Nanometrics Nanospec AFT thickness gauge using arefractive index of 1.64 for the polymer films. The relationship betweenthe normalized-resist-film-thickness-remaining-after-development and thelogarithm of the incident radiation dose were plotted against eachother. From this relationship, the sensitivities of certain polymers todeep ultraviolet light were calculated.

The polymer samples prepared as described in Table II were testedaccording the above described procedures. The results are reported inTable IV below. Table IV illustrates that both PTBSS and PASTBSSexhibited greater sensitivity, less film thickness loss, and greater UVabsorbance at higher degrees of deprotection. Sensitivity was measuredby comparing the clearing dose, D_(p), of the various polymers. Theclearing dose is the minimum dose of radiation required to remove all ofthe film during development.

                                      TABLE IV                                    __________________________________________________________________________    LITHOGRAPHIC COMPARISON OF                                                    NATIVE AND DEPROTECTED POLYMERS                                                                    Film Thickness Loss                                                                     UV Absorbance of                                     Extent of      In Exposed Area                                                                         Polymer/PAG Film                               Polymer                                                                             Deprotection                                                                         Sensitivity [D.sub.p ]                                                                After PEB at 248 nm                                      (batch)                                                                             (%)    (mJ/cm.sup.2)                                                                         (%)       (AU/μm)                                     __________________________________________________________________________    PTBSS  0     12      28        0.300                                          (8)   37      4      21        0.541                                          (9)   58      3      13        0.665                                          (10)  47      4      17        0.574                                          PASTBSS                                                                              0     38      21        0.424                                          (13)  30     23      16        0.517                                          __________________________________________________________________________

The extent to which the polymer is deprotected affects the resistcharacteristics of the polymer. Therefore, it is important to deprotectthe polymer to an extent that will optimize its performance as a resist.The following examples illustrate the effect that several parametersduring the deprotection process have on the extent to which the polymersare deprotected, and the effect of the extent of deprotection on theresist properties of the polymer.

EXAMPLE 5 Effect of Temperature on the Rate of Deprotection

The rate at which several PTBSS polymers were deprotected is illustratedin FIG. 1. The PTBSS polymers tested were batches 1, 2, 3 and 4 fromTable II. The conditions under which these polymers were deprotected arealso enumerated in Table II. FIG. 1 illustrates that the rate at whichthe TBOC group is cleaved from the polymer is much faster when thetemperature is 140° C. (Batch #1) than when the deprotection temperatureis 110° C. (Batch #4). In order to establish a uniform basis forcomparison, the point in time when the polymer solution reached 110° C.was taken as the starting time.

EXAMPLE 6 The Effect of the Solvent on the Rate of Deprotection

The solvent used in the deprotection process also affects the rate atwhich the polymer is deprotected. This solvent effect is illustrated inFIG. 2. The rate at which TBOC groups are cleaved from PTBSS is muchfaster in dimethylsulfoxide (DMSO) (Batches 1 and 2) than in acetone(Batches 6 and 8) at a certain temperature (140° C. for Batches 1 and 6;130° C. for Batches 2 and 8).

EXAMPLE 7 The Effect of the Polymer on the Rate of Deprotection

The rate at which the t-butoxycarbonyloxystyrene-containing polymer isdeprotected is affected by the composition of the polymer itself. FIG. 3illustrates that the rate at which PTBSS was deprotected (Batch 6) wassubstantially greater than the rate at which PTBS was deprotected (Batch11 ). The different polymers were deprotected in the same type ofsolvent (acetone) and at the same temperature (140° C.) as a control.The PTBSS copolymer contains sulfone groups, whereas the PTBShomopolymer does not.

Similarly, FIG. 4 illustrates that the rate at which PASTBSS wasdeprotected (Batch 12) was faster than the rate at which PTBSS wasdeprotected (Batch 8). Again as a control, both polymers weredeprotected in the same type of solvent (acetone) and at the sametemperature (130° C.). The fact that PASTBSS was deprotected at a fasterrate may be due to the greater amount of SO² per mole of styrene inPASTBSS than in PTBSS, as shown in Table 1.

EXAMPLE 8 The Effect of the Deprotection Process on the Sulfur Contentof the Deprotected Polymers

Sulfur-containing polymers do not lose sulfur as the TBOC groups arecleaved from the polymer using the process disclosed herein. This isillustrated in FIG. 5 wherein the theoretical sulfur content of PTBSSand PASTBSS at various stages of deprotection are plotted as solidlines. The theoretical sulfur content assumes no loss of sulfur from thepolymer during the deprotection process. The sulfur content of PTBSS(Batches 6, 8, 9 and 10) and PASTBSS (Batches 12 and 13) at variousdegrees of deprotection was measured and the measurements obtained wereplotted against the predicted sulfur content of the polymers. FIG. 5shows that the actual sulfur content of PTBSS and PASTBSS is identicalto the theoretical sulfur content.

EXAMPLE 9 The Effect of the Deprotection Process on the Optical Densityof Deprotected Polymers

Polymers deprotected by this process, if they are to be used asphotoresists in deep ultraviolet applications, must have an acceptableoptical density at the wavelength of exposure, such as at 248 nm(OD₂₄₈). FIG. 6 illustrates that the OD₂₄₈ increases with increasingamounts of TBOC cleaved from PTBSS (Batches 1-6 and 8). This increase inoptical density was observed regardless of the temperature at whichdeprotection occurred and regardless of the solvent in whichdeprotection occurred.

The effect of deprotection on the OD₂₄₈ is, however, dependent upon thepolymer being deprotected. A comparison of the OD₂₄₈ versus the amountof TBOC cleaved from PTBS, PTBSS and PASTBSS reveals that the OD₂₄₈ forthese various polymers increases at different rates with increasedremoval of TBOC therefrom. As can be observed from FIG. 7, OD₂₄₈ forPASTBSS (Batches 7, 12 and 13), after decreasing initially, alsoincreased. The solid line represents the observed effect of deprotectionon the OD₂₄₈ of PTBSS and is provided for the purposes of comparison.The solid line was obtained from the data used to prepare FIG. 6. TheOD₂₄₈ for PTBSS increased steadily as more TBOC was cleaved from thepolymer. The OD₂₄₈ for PTBS (Batch 11) barely increased with increasingremoval of up to fifty percent of the TBOC from the polymer.

EXAMPLE10 The Effect of Polymer Deprotection on the Resist FilmThickness Loss During Deprotection

As mentioned previously, it is important in lithographic applications tolimit the amount by which the resist film shrinks during PEB. Aspreviously noted in Table IV, the film thickness loss of PTBSS (Batches8, 9 and 10) and PASTBSS (Batch 13) decreased when these polymers weredeprotected. The relationship between increasing TBOC cleavage anddecreasing film thickness loss during PEB is also illustrated in FIG.11.

The above examples are for the purpose of illustrating and explainingthe invention. They are not intended to limit the invention in any waybeyond the spirit and scope of the appended claims.

We claim:
 1. A process for manufacturing a device comprising:obtaining asubstrate with an imaging layer of resist material applied thereon thatis substantially free of added acid or base, the resist materialcomprising a polymer with a backbone chain having pendant substituentswith acid labile functional groups attached, the functional groupsselected from the group consisting of alkyloxy carbonyl and alkyl,wherein at least 5% of the functional groups have been removed andreplaced by hydrogen; exposing a discrete portion of the imaging layerto a dose of radiation, thereby forming an exposed region and anunexposed region wherein an acid is generated in substantially greateramounts in the exposed region than in the unexposed region; developingan image defined by the exposed and unexposed regions of the resistmaterial in the imaging layer; and using said image for manufacturing adevice.
 2. The process of claim 1 wherein the acid labile functionalgroups are t-butoxycarbonyl groups.
 3. The process of claim 1 whereinthe functional groups are t-butyl groups.
 4. The process of claim 2wherein the polymer comprises t-butoxycarbonyloxystyrene andhydroxystyrene.
 5. The process of claim 2 wherein the polymer comprisest-butoxycarbonylmaleimide and maleimide.
 6. The process of claim 3wherein the polymer comprises t-butylmethacrylate and methacrylate. 7.The process of claim 3 wherein the polymer comprisest-butylvinylbenzoate and vinylbenzoate.
 8. The process of claim 1wherein a photoacid-generator is added to the imaging layer.